Open AccessFORMATION OF THREE−DIMENSIONAL STRUCTURES IN SILICON CARBIDE SUBSTRATES BY PLASMOCHEMISTRY ETCHING
Author(s) -
Л. А. Сейдман
Publication year - 2015
Publication title -
izvestiâ vysših učebnyh zavedenij. materialy èlektronnoj tehniki
Language(s) - English
Resource type - Journals
eISSN - 2413-6387
pISSN - 1609-3577
DOI - 10.17073/1609-3577-2015-3-157-171
Subject(s) - etching (microfabrication) , silicon carbide , materials science , silicon , epitaxy , carbide , argon , reactive ion etching , carbon fibers , isotropic etching , nanotechnology , metallurgy , chemical engineering , layer (electronics) , composite material , chemistry , composite number , organic chemistry , engineering