Open AccessTrends in the Development of the Epitaxial Nitride Compounds Technology
Author(s) -
А. А. Арендаренко,
Viktor A. Oreshkin,
Ю. Н. Свешников,
И. Н. Цыпленков
Publication year - 2015
Publication title -
izvestiâ vysših učebnyh zavedenij. materialy èlektronnoj tehniki
Language(s) - English
Resource type - Journals
eISSN - 2413-6387
pISSN - 1609-3577
DOI - 10.17073/1609-3577-2015-1-5-15
Subject(s) - heterojunction , materials science , metalorganic vapour phase epitaxy , optoelectronics , epitaxy , nitride , substrate (aquarium) , gallium nitride , light emitting diode , nucleation , chemical vapor deposition , layer (electronics) , engineering physics , nanotechnology , chemistry , engineering , oceanography , organic chemistry , geology