Open AccessMathematical Modeling of Point Defect Cluster Formation in Silicon Based on Molecular Dynamic Approach
Author(s) -
К. К. Абгарян,
O. Volodina,
С. И. Уваров
Publication year - 2015
Publication title -
izvestiâ vysših učebnyh zavedenij. materialy èlektronnoj tehniki
Language(s) - English
Resource type - Journals
eISSN - 2413-6387
pISSN - 1609-3577
DOI - 10.17073/1609-3577-2015-1-37-42
Subject(s) - cluster (spacecraft) , point (geometry) , crystallographic defect , silicon , computer science , materials science , mathematics , chemistry , crystallography , programming language , geometry , optoelectronics