
Influence of the ab initio Calculation Parameters on Prediction of Energy of Point Defects in Silicon
Author(s) -
Mariya G. Ganchenkova,
И. А. Супрядкина,
К. К. Абгарян,
Д. И. Бажанов,
И. В. Мутигуллин,
В. А. Бородин
Publication year - 2015
Publication title -
izvestiâ vysših učebnyh zavedenij. materialy èlektronnoj tehniki
Language(s) - English
Resource type - Journals
eISSN - 2413-6387
pISSN - 1609-3577
DOI - 10.17073/1609-3577-2015-1-23-30
Subject(s) - ab initio , silicon , materials science , computational chemistry , point (geometry) , energy (signal processing) , ab initio quantum chemistry methods , molecular physics , chemistry , physics , mathematics , metallurgy , quantum mechanics , geometry , molecule