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Properties of Ion–Electron Emission from the Surface of Semiconductor Material During Reactive Ion–Beam Etching
Author(s) -
А. С. Курочка,
А. А. Сергиенко,
С. П. Курочка,
В. И. Колыбелкин
Publication year - 2015
Publication title -
izvestiâ vysših učebnyh zavedenij. materialy èlektronnoj tehniki
Language(s) - English
Resource type - Journals
eISSN - 2413-6387
pISSN - 1609-3577
DOI - 10.17073/1609-3577-2014-2-104-108
Subject(s) - semiconductor , reactive ion etching , ion beam , ion , electron , etching (microfabrication) , atomic physics , materials science , secondary emission , band gap , secondary electrons , chemistry , optoelectronics , layer (electronics) , nanotechnology , physics , organic chemistry , quantum mechanics

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