Open AccessDLTS SPECTRA OF SILICON DIODES WITH P+—N–JUNCTION IRRADIATED WITH HIGH ENERGY KRYPTON IONS
Author(s) -
А. Поклонский,
И. Горбачук,
В. Шпаковский,
А. Филипеня,
С. Турцевич,
V.L. Shvedov,
Во,
Нгуен,
A.U. Skuratov,
Andreas Andreas
Publication year - 2015
Publication title -
izvestiâ vysših učebnyh zavedenij. materialy èlektronnoj tehniki
Language(s) - English
Resource type - Journals
eISSN - 2413-6387
pISSN - 1609-3577
DOI - 10.17073/1609-3577-2014-1-42-46
Subject(s) - deep level transient spectroscopy , irradiation , materials science , krypton , diode , wafer , silicon , fluence , ion , analytical chemistry (journal) , atomic physics , channelling , spectral line , optoelectronics , chemistry , argon , physics , organic chemistry , chromatography , astronomy , nuclear physics