Open AccessBOUNDARY PROCESSES IN ELECTROLYTE — SILICON INTERFACE AREA DURING SELF–ORGANIZATION OF MOSAIC STRUCTURE OF 3D–ISLANDS OF POROUS SILICON NANOCRYSTALLITES AT LONG–TERM ANODE ETCHING OF P–SI (100) IN ELECTROLYTE WITH AN INTERNAL SOURCE OF CURRENT
Author(s) -
К. Б. Тыныштыкбаев,
Ю. А. Рябикин,
С. Ж. Токмолдин,
Б. А. Ракыметов,
Т. Айтмукан,
Х.А. Абдуллин
Publication year - 2015
Publication title -
izvestiâ vysših učebnyh zavedenij. materialy èlektronnoj tehniki
Language(s) - English
Resource type - Journals
eISSN - 2413-6387
pISSN - 1609-3577
DOI - 10.17073/1609-3577-2014-1-31-36
Subject(s) - silicon , materials science , etching (microfabrication) , nanocrystalline silicon , porous silicon , electrolyte , monocrystalline silicon , anode , silane , chemical engineering , epitaxy , crystalline silicon , nanotechnology , optoelectronics , composite material , layer (electronics) , chemistry , electrode , engineering , amorphous silicon