Open AccessPOSSIBILITY OF GROWING BULK SI—GE CRYSTALS USING AXIAL HEAT FLOW METHOD NEAR THE CRYSTALLIZATION FRONT
Author(s) -
М. И. Гоник,
A. Cröll
Publication year - 2015
Publication title -
izvestiâ vysših učebnyh zavedenij. materialy èlektronnoj tehniki
Language(s) - English
Resource type - Journals
eISSN - 2413-6387
pISSN - 1609-3577
DOI - 10.17073/1609-3577-2013-3-12-19
Subject(s) - crystallization , materials science , front (military) , heat flow , silicon , germanium , flow (mathematics) , crystallography , optoelectronics , mechanics , chemical engineering , thermal , mechanical engineering , thermodynamics , chemistry , physics , engineering