Open AccessINFLUENCE OF SILICON LAYER PROPERTIES ON CAPACITANCE PARAMETERS OF MIS/SOS-STRUCTURES
Author(s) -
Л. Енишерлова,
Г. Горячев,
М. Темпер,
А. Капилин
Publication year - 2015
Publication title -
izvestiâ vysših učebnyh zavedenij. materialy èlektronnoj tehniki
Language(s) - English
Resource type - Journals
eISSN - 2413-6387
pISSN - 1609-3577
DOI - 10.17073/1609-3577-2013-1-53-60
Subject(s) - silicon , materials science , silicon on sapphire , capacitance , optoelectronics , annealing (glass) , recrystallization (geology) , layer (electronics) , nanotechnology , chemistry , composite material , silicon on insulator , electrode , paleontology , biology