Open AccessINFLUENCE OF CONDITIONS OF GROWTH ON STRUCTURAL PERFECTION OF LAYERS OF ALN RECEIVED BY METHOD MOS-GIDRIDNOY OF AN EPITAXY
Author(s) -
А. В. Мазалов,
Д. Р. Сабитов,
В. А. Курешов,
А. А. Падалица,
А. А. Мармалюк,
Р. Х. Акчурин
Publication year - 2015
Publication title -
izvestiâ vysših učebnyh zavedenij. materialy èlektronnoj tehniki
Language(s) - English
Resource type - Journals
eISSN - 2413-6387
pISSN - 1609-3577
DOI - 10.17073/1609-3577-2013-1-45-48
Subject(s) - full width at half maximum , materials science , epitaxy , layer (electronics) , optoelectronics , surface finish , root mean square , buffer (optical fiber) , quality (philosophy) , surface roughness , analytical chemistry (journal) , composite material , chemistry , computer science , electrical engineering , chromatography , telecommunications , philosophy , epistemology , engineering