Open AccessELECTRO-PHYSICAL AND PHOTOELECTRICAL CHARACTERISTICS OF MIS-STRUCTURES BASED ON HETERO-EPITAXIAL HGCDTE MBE WITH NON-UNIFORM DISTRIBUTION OF COMPOSITION
Author(s) -
V. V. Voitsekhovskii,
Н. Несмелов,
М. Дзядух
Publication year - 2015
Publication title -
izvestiâ vysših učebnyh zavedenij. materialy èlektronnoj tehniki
Language(s) - English
Resource type - Journals
eISSN - 2413-6387
pISSN - 1609-3577
DOI - 10.17073/1609-3577-2013-1-38-45
Subject(s) - materials science , optoelectronics , capacitance , insulator (electricity) , composition (language) , epitaxy , semiconductor , molecular beam epitaxy , chemistry , nanotechnology , layer (electronics) , electrode , linguistics , philosophy