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X-RAY TOPOGRAPHIC STUDY OF DEFECTS IN SI-BASED MULTILAYER EPITAXIAL POWER DEVICES
Author(s) -
Lidia S. Shul’pina,
А. Г. Козлов
Publication year - 2015
Publication title -
izvestiâ vysših učebnyh zavedenij. materialy èlektronnoj tehniki
Language(s) - English
Resource type - Journals
eISSN - 2413-6387
pISSN - 1609-3577
DOI - 10.17073/1609-3577-2013-1-28-34
Subject(s) - epitaxy , materials science , dislocation , silicon , optoelectronics , slip (aerodynamics) , layer (electronics) , condensed matter physics , composite material , physics , thermodynamics

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