Open AccessQuantum efficiency simulation of InGaN/Si LED
Author(s) -
I.B. Rabinovich,
П. Сушков
Publication year - 2015
Publication title -
izvestiâ vysših učebnyh zavedenij. materialy èlektronnoj tehniki
Language(s) - English
Resource type - Journals
eISSN - 2413-6387
pISSN - 1609-3577
DOI - 10.17073/1609-3577-2012-3-50-53
Subject(s) - light emitting diode , optoelectronics , materials science , quantum efficiency , diode , silicon , quantum , current density , engineering physics , physics , quantum mechanics