Open AccessSequential nitrogen ion implantation in Si-based GaAs matrix and subsequent thermal annealing process: electrical characterization
Author(s) -
Nand Lal Sharma,
Saravanan Rajamani,
В. Г. Шенгуров,
N. V. Baidus,
Д. С. Королев,
Aleikolskaya,
A. N. Mikhaylov,
D. I. Tetelbaum,
Mahesh Kumar
Publication year - 2019
Publication title -
proceedings of the indian national science academy. part a, physical sciences
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.18
H-Index - 18
ISSN - 0370-0046
DOI - 10.16943/ptinsa/2019/49575
Subject(s) - ion implantation , annealing (glass) , materials science , nitrogen , characterization (materials science) , thermal , ion , optoelectronics , matrix (chemical analysis) , rapid thermal processing , silicon , analytical chemistry (journal) , nanotechnology , metallurgy , chemistry , composite material , thermodynamics , physics , organic chemistry , chromatography