Open AccessELECTRON ENERGY SPECTRA IN QUANTIZED STRUCTURES
Author(s) -
Joydeb Pal,
Priyanka Das,
Madhuchhanda Mitra,
K. P. Ghatak
Publication year - 2020
Publication title -
journal of mathematical sciences and computational mathematics
Language(s) - English
Resource type - Journals
eISSN - 2688-8300
pISSN - 2644-3368
DOI - 10.15864/jmscm.1401
Subject(s) - band gap , electron , effective mass (spring–mass system) , semiconductor , isotropy , spectral line , physics , electronic band structure , limiting , condensed matter physics , context (archaeology) , quantum , energy spectrum , quantum mechanics , computational physics , mechanical engineering , paleontology , engineering , biology
In this paper we study the Electron Energy Spectra (EES) in quantum wells (QWs) of heavily doped (HD) non-linear optical, III-V, II-VI, IV-VI and stressed Kane type compounds by formulating HDEES in each case respectively considering all the specialties of the energy band constants of the said materials. It is noted that the complex EES in many cases in HDS, instead of real one, occurs from the existence of the essential poles in the corresponding EES in the absence of band tails. The EES in QWs is Quantized 2D closed surfaces. As a collateral study we have also investigated the effective mass (EM), Density-of-states (DOS) function and the electron statistics in this context for the purpose of comprehensive understanding. The EM exists in the forbidden zone, which is impossible without the effect of band tailing. In the absence of band tails, the EM in the band gap of semiconductors is infinity. Besides, depending on the type of unperturbed carrier energy spectrum, the new forbidden zone will appear within the normal energy band gap for HDS. Under certain limiting conditions all the results for all the models get simplified the well-known results of an isotropic parabolic energy bands which exhibit the mathematical compatibility of our present generalized analysis.