Open AccessInfluence of oxygen and argon ratio on electrical and physical characteristics of ZrxHf1–xO2- based MOS devices
Publication year - 2022
Publication title -
international journal of innovative research in physics
Language(s) - English
Resource type - Journals
eISSN - 2689-484X
pISSN - 2687-7902
DOI - 10.15864/ijiip.3203
Subject(s) - argon , oxygen , materials science , optoelectronics , engineering physics , chemistry , engineering , atomic physics , physics , organic chemistry