Open AccessComputational Study of Magnetic Switching Mechanism of Nanoscale MRAM Cells
Author(s) -
Swapnil Barman
Publication year - 2020
Publication title -
international journal of innovative research in physics
Language(s) - English
Resource type - Journals
eISSN - 2689-484X
pISSN - 2687-7902
DOI - 10.15864/ijiip.1408
Subject(s) - magnetoresistive random access memory , coercivity , remanence , materials science , condensed matter physics , nanoscopic scale , aspect ratio (aeronautics) , magnetization , magnetic field , magnetic hysteresis , hysteresis , antiparallel (mathematics) , saturation (graph theory) , nanotechnology , optoelectronics , random access memory , physics , computer science , mathematics , quantum mechanics , combinatorics , computer hardware
Investigation of magnetic switching of nanoscale single MRAM cells of different shapes and sizes is imperative for their applications in future magnetic memory devices. To this end, we have investigated the magnetic switching mechanism of nanoscale single MRAM cells of two different shapes with varying lateral aspect ratios by computational micromagnetic simulation. We have analysed how various parameters such as the coercive field, remanence and saturation field were affected by the variation in magnetic field. We have also analysed the change in shape of the hysteresis loops of the various samples. The magnetization reversal states were simulated to justify the spatial coherence of magnetization switching. As a result, the cells with higher aspect ratio show the Py and Fe layers forming antiparallel states in the plateau similar to synthetic antiferromagnets. As we reduce the aspect ratio, more complex quasi-uniform magnetic states are observed which are even more complicated for elliptical cells. The rectangular cell with the highest aspect ratio of 2.5 shows the most coherent and predictable switching behaviour, showing its suitability for the application of MRAM cells.