Open AccessTransport properties of a single-molecular transistor at finite temperature
Author(s) -
Manasa Kalla,
T.S Swathi.,
Narasimha Raju Chebrolu,
Ashok Chatterjee
Publication year - 2020
Publication title -
international journal of innovative research in physics
Language(s) - English
Resource type - Journals
eISSN - 2689-484X
pISSN - 2687-7902
DOI - 10.15864/ijiip.1205
Subject(s) - quantum tunnelling , transistor , dissipation , hamiltonian (control theory) , canonical transformation , condensed matter physics , physics , electron , phonon , electron transport chain , quantum , materials science , quantum mechanics , chemistry , mathematics , mathematical optimization , biochemistry , voltage
Quantum transport in a single molecular transistor device is studied at finite temperature in the presence of electron-electron and electron-phonon interactions and dissipation using the Anderson-Holstein-Caldeira-Leggett model. The dissipation due to substrate is treated exactly by a canonical transformation and the electron-phonon interaction is eliminated by the Lang-Firsov transformation. Finally the effective Hamiltonian is studied using the Keldysh non-equilibrium Green function technique and the tunnelling current through the single molecular transistor is obtained at finite temperature.