
Numerical simulation of triple-barrier resonant tunneling diodes based on graphene
Author(s) -
И. И. Абрамов,
N. V. Kolomejtseva,
В. А. Лабунов,
И. А. Романова,
I. Yu. Shcherbakova
Publication year - 2019
Publication title -
ural radio engineering journal
Language(s) - English
Resource type - Journals
eISSN - 2588-0462
pISSN - 2588-0454
DOI - 10.15826/urej.2019.3.4.001
Subject(s) - nanoelectronics , quantum tunnelling , graphene , bilayer graphene , diode , quantum well , resonant tunneling diode , materials science , voltage , semiclassical physics , rectangular potential barrier , condensed matter physics , quantum , nanotechnology , physics , optoelectronics , quantum mechanics , laser