
Raman investigation of electric field induced molecular modifications in organic field effect transistors
Author(s) -
Beynor Antonio Páez-Sierra,
F. Mesa
Publication year - 2013
Publication title -
elementos/elementosbogotâa
Language(s) - English
Resource type - Journals
eISSN - 2248-5252
pISSN - 2027-923X
DOI - 10.15765/e.v2i2.185
Subject(s) - pentacene , raman spectroscopy , debye , dipole , relaxation (psychology) , materials science , density functional theory , transistor , electric dipole moment , molecular physics , chemical physics , condensed matter physics , chemistry , computational chemistry , voltage , physics , optics , quantum mechanics , psychology , social psychology , organic chemistry
The inuence of external electric elds on the vibrational properties of Pentacene-based eld eect transistors were investigated by Ramanspectroscopy.ThemonitoredRamanbandswereintherangefrom 1100cm−1 to1200cm−1,whereabroadbandispresentandenhanceddue to the external electric eld. The process is modeled by density functional theory (DFT) at the B3LYP/3–21G level. Additionally, the relaxation of the Raman bands after the removal of the external eld was determined from an exponential Debye like decay tting to be approximately 94 min, this nding indicates that a long relaxation time ca. 8 h is required in order to recover the original structure. Experimentally and theoretically was demonstrated that the applied electric elds induce articial traps in the organic layer mediated by charge carrier–dipole interaction.