Open AccessRoles of Gate-Oxide Thickness Reduction in Scaling Bulk and Thin-Body Tunnel Field-Effect Transistors
Author(s) -
Nguyễn Đăng Chiến,
Dao Thi Kim Anh,
ChunHsing Shih
Publication year - 2017
Publication title -
vietnam journal of science and technology/science and technology
Language(s) - English
Resource type - Journals
eISSN - 2815-5874
pISSN - 2525-2518
DOI - 10.15625/2525-2518/55/3/8362
Subject(s) - subthreshold swing , scaling , materials science , transistor , optoelectronics , subthreshold conduction , gate oxide , leakage (economics) , oxide , field effect transistor , electronic circuit , reduction (mathematics) , thin film transistor , nanotechnology , electrical engineering , voltage , engineering , layer (electronics) , geometry , mathematics , metallurgy , economics , macroeconomics
Tunnel field-effect transistor (TFET) has recently been considered as a promising candidate for low-power integrated circuits. In this paper, we present an adequate examination on the roles of gate-oxide thickness reduction in scaling bulk and thin-body TFETs. It is shown that the short-channel performance of TFETs has to be characterized by both the off-current and the subthreshold swing because their physical origins are completely different. The reduction of gate-oxide thickness plays an important role in maintaining low subthreshold swing whereas it shows a less role in suppressing off-state leakage in short-channel TFETs with bulk and thin-body structures. When scaling the gate-oxide thickness, the short-channel effect is suppressed more effectively in thin-body TFETs than in bulk devices. Clearly understanding the roles of scaling gate-oxide thickness is necessary in designing advanced scaled TFET devices.