
ANALYTICAL STUDY OF STRAINED SOI MOSFET
Author(s) -
Aditi Varshney
Publication year - 2016
Publication title -
international journal of research in engineering and technology
Language(s) - English
Resource type - Journals
eISSN - 2321-7308
pISSN - 2319-1163
DOI - 10.15623/ijret.2016.0512009
Subject(s) - silicon on insulator , mosfet , materials science , engineering physics , optoelectronics , engineering , electrical engineering , transistor , silicon , voltage