Open AccessAbout the role of melt movement during of the silicon single crystal growth by FZ method
Author(s) -
Сергей Геннадьевич Егоров
Publication year - 2012
Publication title -
tehnologìčnij audit ta rezervi virobnictva
Language(s) - English
Resource type - Journals
eISSN - 2312-8372
pISSN - 2226-3780
DOI - 10.15587/2312-8372.2012.4729
Subject(s) - zone melting , silicon , impurity , materials science , convection , work (physics) , distribution (mathematics) , crystal growth , quality (philosophy) , mechanics , crystallography , metallurgy , chemistry , thermodynamics , physics , organic chemistry , mathematical analysis , mathematics , quantum mechanics