
Research into effect of electrochemical etching conditions on the morphology of porous gallium arsenide
Author(s) -
Sergij Vambol,
Ігор Тимофійович Богданов,
Viola Vambol,
Yana Suchikova,
Hanna Lopatina,
Natalia Tsybuliak
Publication year - 2017
Publication title -
eastern-european journal of enterprise technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.268
H-Index - 24
eISSN - 1729-4061
pISSN - 1729-3774
DOI - 10.15587/1729-4061.2017.118725
Subject(s) - etching (microfabrication) , porosity , dissolution , gallium arsenide , materials science , gallium , electrolyte , crystal (programming language) , chemical engineering , hydrochloric acid , layer (electronics) , isotropic etching , electrochemistry , inorganic chemistry , chemistry , electrode , composite material , metallurgy , optoelectronics , computer science , engineering , programming language