Open AccessEffect of gallium arsenide technology on the formation of integrated circuit structures
Author(s) -
Степан Петрович Новосядлий,
Л. В. Мельник
Publication year - 2014
Publication title -
eastern-european journal of enterprise technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.268
H-Index - 24
eISSN - 1729-4061
pISSN - 1729-3774
DOI - 10.15587/1729-4061.2014.24807
Subject(s) - ohmic contact , semiconductor , optoelectronics , materials science , gallium arsenide , schottky diode , semiconductor device , diode , electronics , schottky barrier , microelectronics , fermi level , electrical contacts , electrical engineering , engineering physics , nanotechnology , electron , engineering , physics , layer (electronics) , quantum mechanics