Open AccessSurface and Bulk Properties which Influence Ion-Beam Hydrogenation of Silicon
Author(s) -
Robert A. Anderson,
Carleton H. Seager
Publication year - 1989
Publication title -
mrs proceedings
Language(s) - English
Resource type - Journals
eISSN - 1946-4274
pISSN - 0272-9172
DOI - 10.1557/proc-163-455
Subject(s) - materials science , passivation , ion , silicon , hydrogen , electrode , schottky diode , ion beam , atomic physics , dopant , ion beam deposition , ionization , analytical chemistry (journal) , deposition (geology) , chemical physics , molecular physics , doping , optoelectronics , nanotechnology , chemistry , paleontology , physics , organic chemistry , layer (electronics) , diode , chromatography , sediment , biology
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