Open AccessIon Beam Annealing of Si Co-Implanted with Ga and As
Author(s) -
S. P. Withrow,
O. W. Holland,
S. J. Pennycook,
J. I. Pánkové,
A. Mascarenhas
Publication year - 1989
Publication title -
mrs proceedings
Language(s) - English
Resource type - Journals
eISSN - 1946-4274
pISSN - 0272-9172
DOI - 10.1557/proc-157-143
Subject(s) - materials science , annealing (glass) , transmission electron microscopy , amorphous solid , ion , impurity , ion implantation , ion beam , crystallography , crystallization , epitaxy , analytical chemistry (journal) , dopant , doping , chemical engineering , optoelectronics , nanotechnology , metallurgy , layer (electronics) , chemistry , organic chemistry , chromatography , engineering
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