Open AccessEffect of thermal treatment on structure and leakage current of Na0.5Bi0.5TiO3 thin films
Author(s) -
T. V. Kruzina,
С. А. Попов,
Yu. N. Potapovich,
A. S. Rutskyi
Publication year - 2018
Publication title -
journal of physics and electronics
Language(s) - English
Resource type - Journals
eISSN - 2664-3626
pISSN - 2616-8685
DOI - 10.15421/331808
Subject(s) - materials science , ohmic contact , thin film , annealing (glass) , schottky diode , leakage (economics) , cavity magnetron , atmospheric temperature range , thermal conduction , analytical chemistry (journal) , optoelectronics , composite material , sputtering , nanotechnology , chemistry , diode , physics , layer (electronics) , chromatography , meteorology , economics , macroeconomics
Na0.5Bi0.5TiO thin films were grown on heated to 200°С Pt/TiO2/SiO2/Si substrates by ex-situ method with high-frequency (13.56 MHz) magnetron deposition. Thermal treatment of the films was carried out at 650°С, 700°С and 800°С. X-ray diffraction investigations showed the films were poly-crystalline and contained additional phase. In the films annealed at 700°C two dominating conduction mechanisms were observed: ohmic at the fields Е < 8 kV/cm and Schottky emission in the field range of 30 – 70 kV/cm. It is also observed that the increase of the film annealing temperature to 800°С leads to the increase of leakage currents. It is assumed that high values of the leakage currents were attributed to the presence of both structure defects and additional unknown phase.