Open AccessEllipsometric and Spectrometric Studies of (Ga0.2In0.8)2Se3 Thin Film
Author(s) -
I.P. Studenyak,
M. Kranjčec,
Vitalii Izai,
V.I. Studenyak,
М.М. Pop,
Л. М. Сусліков
Publication year - 2020
Publication title -
ukrainian journal of physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.213
H-Index - 17
eISSN - 2071-0194
pISSN - 2071-0186
DOI - 10.15407/ujpe65.3.231
Subject(s) - refractive index , thin film , absorption edge , optics , materials science , pseudogap , molar absorptivity , ellipsometry , attenuation coefficient , dispersion (optics) , band gap , absorption (acoustics) , absorption spectroscopy , analytical chemistry (journal) , chemistry , optoelectronics , physics , doping , nanotechnology , cuprate , chromatography
Thermal evaporation technique is used to deposite (Ga0,2In0,8)2Se3 thin films. The refractive index and extinction coefficient dispersions are obtained from the spectral ellipsometry measurements. The dispersion of the refractive index is described in the framework of the Wemple–Di Domenico model. The optical transmission spectra of a (Ga0,2In0,8)2Se3 thin film are studied in the temperature range 77–300 K. The temperature behavior of the Urbach absorption edge, as well as the temperature dependences of the energy pseudogap and Urbach energy, are investigated. The influence of different types of disordering on the optical absorption edge of a (Ga0,2In0,8)2Se3 thin film is discussed. Optical parameters of a (Ga0,2In0,8)2Se3 thin film and a single crystal are compared.