Open AccessInfluence of Atomic Disorder on the Auger Recombination Rate in p-InGaN Alloys
Author(s) -
A. V. Zinovchuk,
Evgeny Sevost’yanov
Publication year - 2020
Publication title -
ukrainian journal of physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.213
H-Index - 17
eISSN - 2071-0194
pISSN - 2071-0186
DOI - 10.15407/ujpe65.2.157
Subject(s) - supercell , auger effect , recombination , auger , materials science , stoichiometry , crystal (programming language) , band gap , atomic physics , condensed matter physics , optoelectronics , chemistry , physics , thunderstorm , biochemistry , meteorology , computer science , gene , programming language
The influence of the atomic disorder on the Auger recombination rate in p-InGaN alloys has been studied. The disorder was simulated using a 4 × 4 × 4 supercell in which In and Ga atoms taken in a required stoichiometric ratio were randomly distributed over the supercell sites. A comparison between the Auger recombination rates calculated in the framework of the supercell and virtual-crystal approximations showed that a large number of allowed interband transitions induced by the atomic disorder strongly increases the Auger recombination rate in wide-band-gap p-InGaN alloys.