
Spectroscopic Studies of RF Discharge Plasma at Plasma-Chemical Etching of Gallium Nitride Epitaxial Structures
Author(s) -
V. V. Hladkovskiy,
O.A. Fedorovich
Publication year - 2017
Publication title -
ukrainian journal of physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.213
H-Index - 17
eISSN - 2071-0194
pISSN - 2071-0186
DOI - 10.15407/ujpe62.03.0208
Subject(s) - gallium , materials science , plasma , plasma etching , etching (microfabrication) , gallium nitride , electrode , biasing , isotropic etching , nitride , analytical chemistry (journal) , spectral line , reactive ion etching , epitaxy , excited state , optoelectronics , atomic physics , voltage , nanotechnology , chemistry , metallurgy , layer (electronics) , electrical engineering , physics , engineering , quantum mechanics , chromatography , astronomy