z-logo
open-access-imgOpen Access
Concentration Dependences of the Electron Effective Mass, Fermi Energy, and Filling of Subbands in Doped InAs/AlSb Quantum Wells
Author(s) -
P. J. Baymatov,
Б. Т. Абдулазизов
Publication year - 2017
Publication title -
ukrainian journal of physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.213
H-Index - 17
eISSN - 2071-0194
pISSN - 2071-0186
DOI - 10.15407/ujpe62.01.0046
Subject(s) - condensed matter physics , effective mass (spring–mass system) , degenerate energy levels , electron , fermi gas , heterojunction , quantum well , fermi energy , doping , fermi level , fermi gamma ray space telescope , degenerate semiconductor , materials science , shubnikov–de haas effect , physics , quantum oscillations , quantum mechanics , laser

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here