Open AccessBehavior of Hydrogen During Crystallization of Thin Silicon Films Doped with Tin
Author(s) -
R.M. Rudenko,
M. Kras’ko,
Vasyl Voitovych,
A.G. Kolosyuk,
V. Yu. Povarchuk,
A.M. Kraichynskyi,
V.O. Yukhymchuck,
V. Ya. Bratus,
Mykhailo V. Voitovych,
I.A. Zaloilo
Publication year - 2013
Publication title -
ukrainian journal of physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.213
H-Index - 17
eISSN - 2071-0194
pISSN - 2071-0186
DOI - 10.15407/ujpe58.12.1165
Subject(s) - crystallization , tin , materials science , impurity , silicon , hydrogen , annealing (glass) , doping , thin film , raman spectroscopy , analytical chemistry (journal) , raman scattering , chemical engineering , nanotechnology , optoelectronics , composite material , chemistry , optics , metallurgy , organic chemistry , engineering , physics , chromatography