Open AccessMicrofluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon
Author(s) -
V. B. Neimash
Publication year - 2000
Publication title -
semiconductor physics, quantum electronics and optoelectronics/semiconductor physics quantum electronics and optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.185
H-Index - 2
eISSN - 1605-6582
pISSN - 1560-8034
DOI - 10.15407/spqeo3.01.011
Subject(s) - oxygen , impurity , silicon , diffusion , materials science , analytical chemistry (journal) , chemistry , metallurgy , thermodynamics , environmental chemistry , physics , organic chemistry