Open AccessSilicon nanowire arrays synthesized using the modified MACE process: Integration into chemical sensors and solar cells
Author(s) -
Mykhailo Dusheiko,
Viktoriia Koval,
Tetyana Obukhova
Publication year - 2022
Publication title -
semiconductor physics, quantum electronics and optoelectronics/semiconductor physics quantum electronics and optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.185
H-Index - 2
eISSN - 1605-6582
pISSN - 1560-8034
DOI - 10.15407/spqeo25.01.058
Subject(s) - materials science , isotropic etching , silicon , etching (microfabrication) , nanotechnology , hydrogen peroxide , nanowire , optoelectronics , nanostructure , silicon nanowires , resistor , chemistry , electrical engineering , organic chemistry , engineering , layer (electronics) , voltage
In this work, the influence of the technological process for metal-assisted chemical etching on surface morphology and electrophysical properties of obtained nanostructures has been investigated. It has been demonstrated that the obtained structures with a high aspect ratio could be used both in sensors and solar cells. It has been shown that application of the metal-assisted chemical etching (MACE) process enables to significantly improve the short-circuit current density in silicon solar cells (up to 29 mA/cm2). Also, the possibility of detection of hydrogen peroxide and glucose (via enzymatic reaction) by resistor-like sensors with nanostructured silicon as the sensitive area has been demonstrated with the sensitivity up to 2.5…2.75 mA/V•%.