Open AccessThermal stability of electrical parameters of silicon crystal doped with nickel during growth
Author(s) -
M.K. Bakhadyrkhanov,
Kanatbay A. Ismailov,
E.Zh. Kosbergenov
Publication year - 2022
Publication title -
semiconductor physics, quantum electronics and optoelectronics/semiconductor physics quantum electronics and optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.185
H-Index - 2
eISSN - 1605-6582
pISSN - 1560-8034
DOI - 10.15407/spqeo25.01.006
Subject(s) - nickel , materials science , silicon , annealing (glass) , doping , thermal stability , semiconductor , thermal , crystal growth , optoelectronics , atmospheric temperature range , engineering physics , metallurgy , chemical engineering , crystallography , thermodynamics , chemistry , physics , engineering
This work shows that the introduction of nickel atoms in the process of growing silicon crystals enables to obtain a material with stable electrophysical parameters during thermal annealing in the wide temperature range 450…1050 °С and duration (t = 0.5...25 hours). This is the most cost-effective way to create material for semiconductor devices and solar cells with stable parameters.