Open AccessPhase transition in vanadium oxide films formed by multistep deposition
Author(s) -
V. P. Kladko,
V. Melnik,
O. I. Liubchenko,
B. Romanyuk,
O. Gudymenko,
T. Sabov,
Oleksandr Dubikovskyi,
Z.V. Maksimenko,
O. Kosulya,
O.A. Kulbachynskyi,
Peter Lytvyn,
О.O. Efremov
Publication year - 2021
Publication title -
semiconductor physics, quantum electronics and optoelectronics/semiconductor physics quantum electronics and optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.185
H-Index - 2
eISSN - 1605-6582
pISSN - 1560-8034
DOI - 10.15407/spqeo24.04.362
Subject(s) - annealing (glass) , materials science , vanadium oxide , vanadium , oxide , deposition (geology) , thin film , metal–insulator transition , transition metal , metal , chemical engineering , analytical chemistry (journal) , nanotechnology , metallurgy , chemistry , organic chemistry , paleontology , engineering , sediment , catalysis , biology
VOx films deposited using the multistep method have been investigated. These films were deposited by repeating the two-stage method of low-temperature deposition – low-temperature annealing. The structure and characteristics of VOx thin films have been studied. Taking into account the obtained results, theoretical modeling of the structure was performed and the parameters of the metal-insulator transition have been calculated.