Phase transition in vanadium oxide films formed by multistep deposition | Zendy

V.P. Kladko | Zendy; V. Melnik | Zendy; Oleksii Liubchenko | Zendy; B. Romanyuk | Zendy; O. Yo. Gudymenko | Zendy; T. Sabov | Zendy; Oleksandr Dubikovskyi | Zendy; Z. Maksimenko | Zendy; O. Kosulya | Zendy; O.A. Kulbachynskyi | Zendy; P. M. Lytvyn | Zendy; O. O. Efremov | Zendy

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Phase transition in vanadium oxide films formed by multistep deposition

Author(s) -

V.P. Kladko,

V. Melnik,

Oleksii Liubchenko,

B. Romanyuk,

O. Yo. Gudymenko,

T. Sabov,

Oleksandr Dubikovskyi,

Z. Maksimenko,

O. Kosulya,

O.A. Kulbachynskyi,

P. M. Lytvyn,

O. O. Efremov

Publication year - 2021

Publication title -

semiconductor physics quantum electronics and optoelectronics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.185

H-Index - 2

eISSN - 1605-6582

pISSN - 1560-8034

DOI - 10.15407/spqeo24.04.362

Subject(s) - annealing (glass) , materials science , vanadium oxide , vanadium , oxide , deposition (geology) , thin film , metal–insulator transition , transition metal , metal , chemical engineering , analytical chemistry (journal) , nanotechnology , metallurgy , chemistry , organic chemistry , paleontology , engineering , sediment , catalysis , biology

VOx films deposited using the multistep method have been investigated. These films were deposited by repeating the two-stage method of low-temperature deposition – low-temperature annealing. The structure and characteristics of VOx thin films have been studied. Taking into account the obtained results, theoretical modeling of the structure was performed and the parameters of the metal-insulator transition have been calculated.

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