Open AccessNanostructured SiC as a promising material for the cold electron emitters
Author(s) -
A. Goriachko,
М. В. Стріха
Publication year - 2021
Publication title -
semiconductor physics, quantum electronics and optoelectronics/semiconductor physics quantum electronics and optoelectronics
Language(s) - English
Resource type - Journals
eISSN - 1605-6582
pISSN - 1560-8034
DOI - 10.15407/spqeo24.04.355
Subject(s) - microelectronics , materials science , field electron emission , wafer , cathode , electric field , substrate (aquarium) , optoelectronics , silicon , nanotechnology , cold cathode , silicon carbide , engineering physics , electron , composite material , electrical engineering , oceanography , physics , quantum mechanics , geology , engineering
In this paper, the novel cold electron emitters based on nanostructured SiC layers covering the Si(001) substrate have been proposed. Their main advantage is an extremely simple and cost-effective manufacturing process based on the standard microelectronics-grade silicon wafers with no ultra-high vacuum required and no complicated chemical deposition processes or toxic chemicals involved. It integrates within a single technological step both the SiC growth and nanostructuring the surface in the form of nanosized protrusions, which is extremely beneficial for cathode applications. A simple mathematical model predicts field emission current densities and turn-on electric fields, which would allow practical device applications. According to our estimations, emission currents in the milli-Amp range can be harvested from one square centimeter of the cathode surface with electric field close to 107 V/m. So, the nanostructured SiC can be the promising material for the cold electron emitters.