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Simulation and characterization of planar high-efficiency back contact silicon solar cells
Author(s) -
А. В. Саченко,
V. P. Kostylyov,
R.M. Korkishko,
V.M. Vlasiuk,
I.O. Sokolovskyi,
B.F. Dvernikov,
В.В. Черненко,
Mykhaylo Evstigneev
Publication year - 2021
Publication title -
semiconductor physics, quantum electronics and optoelectronics/semiconductor physics quantum electronics and optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.185
H-Index - 2
eISSN - 1605-6582
pISSN - 1560-8034
DOI - 10.15407/spqeo24.03.319
Subject(s) - auger effect , recombination , silicon , planar , optoelectronics , materials science , open circuit voltage , energy conversion efficiency , auger , exciton , solar cell , radiative transfer , space charge , photovoltaic system , voltage , physics , atomic physics , optics , chemistry , condensed matter physics , electrical engineering , electron , nuclear physics , biochemistry , computer graphics (images) , quantum mechanics , computer science , gene , engineering
Short-circuit current, open-circuit voltage, and photoconversion efficiency of silicon high-efficiency solar cells with all back contact (BCSC) with planar surfaces have been calculated theoretically. In addition to the recombination channels usually considered in this kind of modeling, namely, radiative, Auger, Shockley–Read–Hall, and surface recombination, the model also takes into account the nonradiative trap-assisted exciton Auger recombination and recombination in the space charge region. It is ascertained that these two recombination mechanisms are essential in BCSCs in the maximum power operation regime. The model results are in good agreement with the experimental results from the literature.

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