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The boson peak and the first sharp diffraction peak in (As2S3)x(GeS2)1–x glasses
Author(s) -
A. Stronski,
Taras Kavetskyy,
L. Revutska,
I. Kaban,
P. Jóvári,
K. Shportko,
V.P. Sergienko,
M.V. Popovych
Publication year - 2021
Publication title -
semiconductor physics, quantum electronics and optoelectronics/semiconductor physics quantum electronics and optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.185
H-Index - 2
eISSN - 1605-6582
pISSN - 1560-8034
DOI - 10.15407/spqeo24.03.312
Subject(s) - diffraction , raman spectroscopy , boson , x ray crystallography , spectroscopy , crystallography , synchrotron , materials science , condensed matter physics , physics , chemistry , optics , quantum mechanics , particle physics
The parameters of the boson peak (BP) and the first sharp diffraction peak (FSDP) in (As2S3)x(GeS2)1x glasses measured using high-resolution Raman spectroscopy and high-energy synchrotron X-ray diffraction measurements are examined as a function of x. It has been found that there is no correlation between the positions of BP and FSDP. The BP position shows a nonlinear composition behavior with a maximum at about x = 0.4, whereas the FSDP position changes virtually linearly with x. The intensities of both BP and FSDP show nonlinear composition dependences with the slope changes at x = 0.4, although there is no direct proportionality. Analysis of the partial structure factors for the glasses with x = 0.2, 0.4 and 0.6 obtained in another study has shown that the cation-cation atomic pairs of Ge–Ge, Ge–As and As–As make the largest contribution to FSDP, where the Ge–Ge and Ge–As pairs are dominant.

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