Open AccessFormation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon
Author(s) -
К. А. Исмайлов,
X. M. Iliev,
M. O. Tursunov,
Bayrambay K. Ismaylov
Publication year - 2021
Publication title -
semiconductor physics, quantum electronics and optoelectronics/semiconductor physics quantum electronics and optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.185
H-Index - 2
eISSN - 1605-6582
pISSN - 1560-8034
DOI - 10.15407/spqeo24.03.255
Subject(s) - impurity , silicon , crystallography , crystal structure , ionic bonding , covalent bond , group (periodic table) , lattice (music) , crystal (programming language) , ion , chemistry , materials science , metallurgy , physics , programming language , organic chemistry , computer science , acoustics
Formation of complexes of impurity Mn atoms with impurity atoms of group VI elements (S, Se, Te) in the silicon crystal lattice has been studied. It has been experimentally found that formation of electrically neutral molecules with an ionic-covalent bond between Mn atoms and group VI elements takes place, which possibly leads to formation of new Si2BVI++Mn binary unit cells in the silicon crystal lattice. It has been shown that in the samples Si , Si and Si , an intense complex formation occurs at the temperatures 1100, 820 and 650°C, respectively.