Open AccessNon-recombination injection mode
Author(s) -
A. Yu. Leyderman,
R. A. Ayukhanov,
R.M. Turmanova,
A. K. Uteniyazov,
E.S. Esenbaeva
Publication year - 2021
Publication title -
semiconductor physics, quantum electronics and optoelectronics/semiconductor physics quantum electronics and optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.185
H-Index - 2
eISSN - 1605-6582
pISSN - 1560-8034
DOI - 10.15407/spqeo24.03.248
Subject(s) - ambipolar diffusion , p–n junction , recombination , current (fluid) , diffusion , diffusion current , voltage , type (biology) , base (topology) , physics , condensed matter physics , atomic physics , materials science , chemistry , semiconductor , optoelectronics , thermodynamics , mathematics , electron , quantum mechanics , mathematical analysis , biology , ecology , biochemistry , gene
A new type of injection regime is considered – non-recombination one, which can be realized in the forward direction of the current in structures of the p-n-n+ type under conditions of opposite directions of ambipolar diffusion and drift of non-equilibrium carriers. This is possible only if the accumulation at the n-n+ junction is stronger than the injection through the p-n junction, i.e., the concentration of carriers at the boundary of the n-base with the n-n+ junction is higher than their concentration at the boundary of the n-base with the p-n junction. In this mode, the dependences of the current on the voltage of the type J ~ V, and then J ~ V2 appear. Experimentally, such a behavior of the current-voltage characteristic is observed for the Al–Al2O3–CdTe structure.