Open AccessInfluence of electrically neutral nickel atoms on electrical and recombination parameters of silicon
Author(s) -
М. К. Бахадырханов,
Bayrambay K. Ismaylov,
С. А. Тачилин,
К. А. Исмайлов,
Н. Ф. Зикриллаев
Publication year - 2020
Publication title -
semiconductor physics, quantum electronics and optoelectronics/semiconductor physics quantum electronics and optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.185
H-Index - 2
eISSN - 1605-6582
pISSN - 1560-8034
DOI - 10.15407/spqeo23.04.361
Subject(s) - nickel , silicon , impurity , materials science , cluster (spacecraft) , range (aeronautics) , getter , oxygen , thermal , thermal stability , atomic physics , doping , spectroscopy , oxygen atom , atmospheric temperature range , binding energy , chemical physics , analytical chemistry (journal) , chemistry , optoelectronics , metallurgy , molecule , thermodynamics , physics , organic chemistry , quantum mechanics , chromatography , computer science , composite material , programming language
The results of this study show that creation of clusters from impurity nickel atoms almost completely suppresses generation of thermal donors within the temperature range 450 to 1200 °C. The composition of these clusters was determined using the technique of energy dispersive X-ray spectroscopy, which revealed that the typical cluster consists of silicon atoms (65%), nickel atoms (15%) and oxygen atoms (19%). Based on the experimental results, the authors have suggested that the nickel atoms intensively perform the role of getter for oxygen atoms in the course of clusterization. It was shown that the additional doping of silicon with nickel at T = 1100…1200 °C enables to ensure a sufficiently high thermal stability of its electrical parameters within a wide temperature range.