Open AccessDetermination of temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes
Author(s) -
Abdelhakim Latreche
Publication year - 2020
Publication title -
semiconductor physics, quantum electronics and optoelectronics/semiconductor physics quantum electronics and optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.185
H-Index - 2
eISSN - 1605-6582
pISSN - 1560-8034
DOI - 10.15407/spqeo23.03.271
Subject(s) - diode , materials science , optoelectronics , schottky barrier , schottky diode , current (fluid) , silicon carbide , electron , reverse leakage current , effective mass (spring–mass system) , voltage , engineering physics , condensed matter physics , electrical engineering , physics , composite material , engineering , quantum mechanics