Open AccessCurrent-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure
Author(s) -
И. Б. Сапаев
Publication year - 2019
Publication title -
semiconductor physics, quantum electronics and optoelectronics/semiconductor physics quantum electronics and optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.185
H-Index - 2
eISSN - 1605-6582
pISSN - 1560-8034
DOI - 10.15407/spqeo22.02.188
Subject(s) - photodetector , materials science , optoelectronics , voltage , current (fluid) , electrical engineering , engineering