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Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films
Author(s) -
Yu. Yu. Bacherikov
Publication year - 2012
Publication title -
semiconductor physics, quantum electronics and optoelectronics/semiconductor physics quantum electronics and optoelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.185
H-Index - 2
eISSN - 1605-6582
pISSN - 1560-8034
DOI - 10.15407/spqeo15.01.013
Subject(s) - interface (matter) , heterojunction , materials science , thin film , optoelectronics , nanotechnology , engineering physics , composite material , engineering , capillary number , capillary action

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