
Effect of pore depth on the effective minority carrier lifetime in macroporous silicon
Author(s) -
V.F. Onyshchenko,
Л. А. Карачевцева
Publication year - 2019
Publication title -
hìmìâ, fìzіka ta tehnologìâ poverhnì/hìmìâ, fìzika ta tehnologìâ poverhnì
Language(s) - English
Resource type - Journals
eISSN - 2518-1238
pISSN - 2079-1704
DOI - 10.15407/hftp10.03.294
Subject(s) - silicon , carrier lifetime , substrate (aquarium) , charge carrier , diffusion , crystal (programming language) , materials science , macropore , layer (electronics) , porous silicon , chemical physics , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , thermodynamics , chromatography , mesoporous material , biochemistry , oceanography , physics , computer science , programming language , geology , catalysis