Open AccessInfluence of Ge isovalent impurity and thermoannealings on the electrophysical properties of silicon crystals
Author(s) -
Г. П. Гайдар,
П. И. Баранский
Publication year - 2016
Publication title -
dopovidi nacionalʹnoï akademiï nauk ukraïni/dopovìdì nacìonalʹnoï akademìï nauk ukraïni
Language(s) - English
Resource type - Journals
eISSN - 2518-153X
pISSN - 1025-6415
DOI - 10.15407/dopovidi2016.07.062
Subject(s) - impurity , silicon , materials science , condensed matter physics , chemical engineering , chemical physics , crystallography , optoelectronics , chemistry , physics , organic chemistry , engineering