Density of states and interband light absorption in Y2O3 and Sc2O3 thin films | Zendy

О. М. Бордун | Zendy; I. O. Bordun | Zendy; I. M. Kofliuk | Zendy; I. Yo. Kukharskyy | Zendy; І Medvid | Zendy

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Density of states and interband light absorption in Y2O3 and Sc2O3 thin films

Author(s) -

О. М. Бордун,

I. O. Bordun,

I. M. Kofliuk,

I. Yo. Kukharskyy,

І Medvid

Publication year - 2022

Publication title -

physics and chemistry of solid state

Language(s) - English

Resource type - Journals

eISSN - 2309-8589

pISSN - 1729-4428

DOI - 10.15330/pcss.23.1.40-44

Subject(s) - exciton , absorption (acoustics) , absorption edge , radius , semiconductor , materials science , doping , thin film , enhanced data rates for gsm evolution , condensed matter physics , phonon , evaporation , wavelength , atomic physics , molecular physics , optoelectronics , chemistry , physics , band gap , nanotechnology , telecommunications , computer security , computer science , composite material , thermodynamics

The long-wavelength edge of the fundamental absorption band of thin Y2O3 and Sc2O3 films obtained by the method of discrete evaporation in vacuum is investigated. On the basis of its temperature dependence, the excitons - phonon interaction is investigated, which made it possible to interpret the absorption edge as the absorption of self-trapped excitons. To analyze the experimental results, we used a model of a heavily doped or defective semiconductor in the quasi-classical approximation. The use of this model made it possible to estimate the radius of the ground electronic state a and the screening radius rS and the concentration of free charge carriers N in the films under study.

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