Open AccessLow-temperature deposition of Cd1-xZnxTe layers by laser sputtering and their physical properties
Author(s) -
Yu.S. Gromovyi,
L. Rashkovetskyi,
S. V. Plyatsko
Publication year - 2022
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.23.1.154-158
Subject(s) - photoluminescence , exciton , acceptor , substrate (aquarium) , luminescence , crystal (programming language) , materials science , spectral line , single crystal , sputtering , laser , optoelectronics , analytical chemistry (journal) , chemistry , thin film , optics , condensed matter physics , crystallography , nanotechnology , physics , chromatography , astronomy , geology , computer science , programming language , oceanography
CdZnTe films were grown by the method of modulated infrared laser deposition at a substrate temperature Tsub ≤ 1200C from appropriate sources on oriented single-crystal substrates Si, GaAs, InSb in the same technological conditions in one technological cycle. Surface morphology and spectra of low-temperature photoluminescence (T = 4.2K) in the energy range from 1.30 to 1.70 eV were studied. Luminescence spectra were analyzed and presented from three different energy regions: from 1.70 eV to 1.60 eV with exciton emission, from 1.60 eV to 1.55 eV by donor-acceptor transitions (DAP) and region A-centers from 1, 55 to 1.40 eV. The presence in the low-temperature photoluminescence spectra of free exciton bands, excitons on the neutral acceptor and neutral donor, and their phonon replicas on CdZnTe/InSb films testifies to the high structural perfection inherent in materials of detector quality with composition corresponding of the CdZnTe-target.